For pump-probe measurements, a commercial Ti:sapphire laser syste

For pump-probe measurements, a commercial Ti:sapphire laser system providing short pulses (approximately 30 fs) with repetition rate of 75 MHz and wavelength of 800 nm (hv = 1.55 eV) was used. The pump beam was focused at a diameter of about 50 μm with pump fluence ranging from 15.2 to 45.7 μJ/cm2, while the probe fluence was fixed at approximately 1 μJ/cm2 at spot diameter of 20 μm. The pump pulses were modulated at 2 KHz with a chopper. A mechanical delay stage was used to vary the time delay between the pump and probe NCT-501 pulses. The transient reflectivity change ΔR/R of the probe beam was measured as a function of the pump-probe delay time. The small reflected signals were detected

and fed into a lock-in amplifier. Results and discussion Figure  1a,b shows the laser-produced plasmas (LPP) at the surface of the CIGS GM6001 order target by ns and fs laser, respectively. It exhibits substantial dissimilarities in LPPs that can be explained by the various laser-target interactions. For the ns-PLD process (Figure  1a), there is much residual heat, which is caused by the longer duration of laser pulse, as the pulse laser hits the target. The residual

heat is due to the picosecond order of both the heat conduction time and ion energy transfer time, which is much faster than the pulse width of the excimer laser. It leads to the mixing of the melted CIGS (gray color) debris with the direct-transferred undesirable Cu2Se secondary phases (yellow color) from the target as

clusters were ejected along with the plasma in expansive directions. The effect of residual heat can spread to a wider range in the target, thus leading to an enlarged heat-affected zone (HAZ) (red region) that brings the plasma and debris with variation in energy and random transportation directions. This is why the expansive plasma was observed as shown in the inset of Figure  1a. Nonetheless, these large clusters can re-crystallize into a preferred orientation directed by the flow of the remaining residual energy of the laser pulses and the thermal energy from the heated substrate. Figure 1 Schematic selleck inhibitor illustrations and photos of laser-produced plasmas on CIGS target. (a) ns-PLD and (b) Lck fs-PLD. On the contrary, the highly localized interactions with target minimize the HAZ by the fs pulse laser. This is because the duration of laser pulse is shorter than the heat conduction time, so the residual energy can be eliminated. The main mechanism of producing plasma by fs pulse laser is coulomb explosion, a process that ionizes atoms in a solid-state target through an extremely intensive electric field, rather than conventional evaporation. With the absence of residual heat, concentrated plasma was generated by fs laser pulses (Figure  1b), which consists of the mixture of atoms and nanometer particles.

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