Ahlswede et al. determined the multicast capacity in a network of lossless links and showed that achieving the multicast capacity requires in general the use of network coding [5]. Network coding theory allows intermediate relay nodes to recombine the data packets message before forwarding it. When one source node fails, its data can still survive elsewhere in the network with high probability. The data storage and collection strategy based on network coding [3] can effectively avoid the mass redundancy of simple backup strategies, improving the data persistence and transmission efficiency. Li et al. proved that linear network coding is sufficient to achieve network multicast capacity [16], which established the foundation for the development and application of network coding theory.
The COPE coding method [17], proposed by Katti et al. based on the XOR operation, established the basic coding system to study the various characteristics of network coding
Due to the excellent development of the complementary metal oxide semiconductor (CMOS) technology, many micro-electromechanical systems (MEMS) devices such as comb-fingers [1], micro-mirrors [2], and resonators [3], the so-called CMOS-MEMS, can be fabricated by standard CMOS processes. The main advantage of CMOS-MEMS is batch production. Apart from the electrical testing of circuits, the MEMS-side still requires the mechanical testing of micro-sensing or -actuating components. However, there is no standard mechanical testing method for CMOS-MEMS devices.
Characterization of the mechanical properties of CMOS-MEMS devices is important since their performance depends on the constitutive properties of the thin film made by the CMOS process. It is known that the properties of thin films are different from those of bulk materials, depending on the fabrication process. Moreover, large residual stress may induce failure of the micro-devices and circuits. Therefore, the material properties, such GSK-3 as Young��s modulus and residual stress, should be controlled as early as possible to ensure the repeatability for each device.The property-extraction methods for large-scale implementation in MEMS fabrication require additional measurement and actuation equipment or complicated test structure designs.
These methods are not compatible with IC metrology technologies. From the mechanical viewpoint of MEMS devices, the important thin-film material parameters are Young��s modulus [4�C15], residual stress [7,9,15�C18], Poisson��s ratio and shear modulus [15], residual strain [8,19], and hardness [20]. Among AV-951 these mentioned parameters, Young��s modulus and residual stress have attracted the most attention.