CrossRef 2. Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F, Fang M, Yang Z, Shi X, Dong G, Hung TF, Ho JC: Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Adv Mater 2013, 25:4445–4451.CrossRef 3. Johansson J, Karlsson LS, Svensson CP, Martensson T, Wacaser BA, Deppert K, Samuelson L, Seifert W: Structural #Thiazovivin randurls[1|1|,|CHEM1|]# properties of <111> B-oriented III-V nanowires. Nat
Mater 2006, 5:574–580.CrossRef 4. Caroff P, Dick KA, Johansson J, Messing ME, Deppert K, Samuelson L: Controlled polytypic and twin-plane superlattices in III-V nanowires. Nat Nanotechnol 2009, 4:50–55.CrossRef 5. Han N, Hou JJ, Wang F, Yip S, Yen YT, Yang ZX, Dong G, Hung T, Chueh YL, Ho JC: GaAs nanowires: from manipulation of defect formation to controllable electronic
transport properties. ACS Nano 2013, 7:9138–9146.CrossRef 6. Hui AT, Wang F, Han N, Yip S, Xiu F, Hou JJ, Yen YT, Hung T, Chueh YL, Ho JC: High-performance indium phosphide nanowires synthesized on amorphous ARRY-438162 solubility dmso substrates: from formation mechanism to optical and electrical transport measurements. J Mater Chem 2012, 22:10704.CrossRef 7. Ikejiri K, Kitauchi Y, Tomioka K, Motohisa J, Fukui T: Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires. Nano Lett 2011, 11:4314–4318.CrossRef 8. Wang J, Plissard SR, Verheijen MA, Feiner LF, Cavalli A, Bakkers EP: Reversible switching of InP nanowire growth direction by catalyst engineering. Nano Lett 2013, 13:3802–3806.CrossRef 9. Dick KA, Caroff P, Bolinsson J, Messing ME, Johansson J, Deppert K, Wallenberg LR, Samuelson
L: Control of III–V nanowire crystal structure by growth parameter tuning. Semicond Sci Tech 2010, 25:024009.CrossRef 10. Glas F, Harmand JC, Patriarche G: Why does wurtzite BCKDHB form in nanowires of III-V zinc blende semiconductors? Phys Rev Lett 2007, 99:146101.CrossRef 11. Kitauchi Y, Kobayashi Y, Tomioka K, Hara S, Hiruma K, Fukui T, Motohisa J: Structural transition in indium phosphide nanowires. Nano Lett 2010, 10:1699–1703.CrossRef 12. Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC: Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices. ACS Nano 2012, 6:3624–3630.CrossRef 13. Han N, Wang F, Hui AT, Hou JJ, Shan GC, Fei X, Hung TF, Ho JC: Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates. Nanotechnology 2011, 22:285607.CrossRef 14. Tian B, Xie P, Kempa TJ, Bell DC, Lieber CM: Single-crystalline kinked semiconductor nanowire superstructures. Nat Nanotechnol 2009, 4:824–829.CrossRef 15. Krishnamachari U, Borgstrom M, Ohlsson BJ, Panev N, Samuelson L, Seifert W, Larsson MW, Wallenberg LR: Defect-free InP nanowires grown in [001] direction on InP (001). Appl Phys Lett 2004, 85:2077.CrossRef 16. Wang X, Ding Y, Summers CJ, Wang ZL: Large-scale synthesis of six-nanometer-wide ZnO nanobelts. J Phys Chem B 2004, 108:8773–8777.CrossRef 17.