Figure 8 HRTEM of H/O x with (a) the thickest IL and (b) the thinnest IL. In (b), it is observed that HfO2 is directly contact with Si in some locations. Figure 9 C-V curves measured at various frequencies for H/O x . (a) EOT = 26 Å, having
the least D it; (b) EOT = 24 Å; (c) EOT = 23 Å; (d) EOT = 22 Å, having the highest D it. (3) where C ox is the gate oxide capacitance per unit area, C H is the measured capacitance per unit area under frequency 1 MHz, and C L is the measured capacitance per unit area under frequency 1 kHz. The cumulative data of D it at midgap (E t = E i ) of samples H/Ox are presented in Figure 10 (SH/Ox not shown for CB-5083 cell line brevity). Higher D it and wider Weibull distribution for samples with thin IL are observed. Nonuniform interfacial property becomes serious when IL thickness is reduced. Figure 10 Cumulative data of D it at midgap ( E t = E i ) for H/O x . The wider distribution of data represents the phenomenon of nonuniformity for devices with thinner IL. Conclusions In this study, we demonstrated that structure with stacking dielectric layer would own the higher breakdown field from TZDB test. While higher breakdown power at the initiation of breakdown BAY 1895344 mw and
lower resistance after breakdown are observed for stacking structure. In addition, the importance of IL is discussed in this work. Thinner IL would result in the increase of D it and the degradation of breakdown field. The explanation of the phenomenon is proposed and is confirmed by HRTEM. see more Acknowledgements This work is supported by the National Science Council of Taiwan, Republic of China, under Contract No. NSC 102-2221-E-002-183-MY3. References 1. Kim NS, Austin T, Baauw D, Mudge T, Flautner K, Hu JS, Irwin MJ, Kandemir M, Narayanan V: Leakage current:
Moore’s law meets static power. IEEE computer 2003, 36:68–74. 2. Tang S, Wallance RM, Seabaugh A, King-Smith D: Evaluating the minimum thickness of gate oxide on silicon using first-principles method. Appl Surf Sci 1998, 135:137–142. 10.1016/S0169-4332(98)00286-4CrossRef 3. Muller DA, Sorsch T, Moccio S, buy CX-4945 Baumann FH, Evans-Lutterodt K, Timp G: The electronic structure at the atomic scale of ultrathin gate oxides. Nature 1999, 399:758–761. 10.1038/21602CrossRef 4. Timp G, Agarwal A, Baumann FH, Boone T, Buonanno M, Cirelli R, Donnelly V, Foad M, Grant D, Green M, Gossmann H, Hillenius S, Jackson J, Jacobson D, Kleiman R, Komblit A, Klemens F, Lee JT-C, Mansfield W, Moccio S, Murrell A, O’Malley M, Rosamilia J, Sapjeta J, Silverman P, Sorsch T, Tai WW, Tennant D, Vuong H, Weir B: Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs. IEEE Int Electron Devices Meeting 1997, 930. doi:10.1109/IEDM.1997.650534 5. Cho MH, Ko DH, Choi YG, Lyo IW, Jeong K, Whang CN: YSi 2-x formation in the presence of interfacial SiO 2 layer. J Appl Phys 2002, 92:5555–5559. 10.1063/1.1512323CrossRef 6.